transistors 1 publication date: march 2003 sjc00072ced parameter symbol conditions min typ max unit collector-base voltage 2sb1219 v cbo i c = ? 10 a, i e = 0 ? 30 v (emitter open) 2SB1219A ? 60 collector-emitter voltage 2sb1219 v ceo i c = ? 2 ma, i b = 0 ? 25 v (base open) 2SB1219A ? 50 emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 5v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 0.1 a forward current transfer ratio * 1 h fe1 * 2 v ce = ? 10 v, i c = ? 150 ma 85 340 ? h fe2 v ce = ? 10 v, i c = ? 500 ma 40 collector-emitter saturation voltage * 1 v ce(sat) i c = ? 300 ma, i b = ? 30 ma ? 0.35 ? 0.60 v base-emitter saturation voltage * 1 v be(sat) i c = ? 300 ma, i b = ? 30 ma ? 1.1 ? 1.5 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 6 15 pf (common base, input open circuited) 2sb1219, 2SB1219A silicon pnp epitaxial planar type for general amplification complementary to 2sd1820 and 2sd1820a features ? large c ollector current i c ? s-mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing. absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c parameter symbol rating unit collector-base voltage 2sb1219 v cbo ? 30 v (emitter open) 2SB1219A ? 60 collector-emitter voltage 2sb1219 v ceo ? 25 v (base open) 2SB1219A ? 50 emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 500 ma peak collector current i cp ? 1a collector power dissipation p c 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: rank classification note) product of no-rank is not classified and have no marking symbol for rank. 2.1 0.1 1.3 0.1 0.3 +0.1 ?0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 ?0.1 0.15 +0.10 ?0.05 5 10 1: base 2: emitter 3: collector eiaj: sc-70 smini3-g1 package unit: mm marking symbol: ? 2sb1219: c ? 2SB1219A: d rank q r s no-rank h fe1 85 to 170 120 to 240 170 to 340 85 to 340 marking 2sb1219 cq cr cs c symbol 2SB1219A dq dr ds d
2sb1219, 2SB1219A 2 sjc00072ced v be(sat) ? i c v ce(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e c ob ? v cb v cer ? r be 0 160 40 120 80 ambient temperature t a ( c ) collector power dissipation p c ( mw ) 0 240 200 160 120 80 40 0 ? 20 ? 4 ? 8 ? 16 ? 12 collector-emitter voltage v ce ( v ) collector current i c ( ma ) 0 ? 800 ? 700 ? 600 ? 500 ? 400 ? 300 ? 200 ? 100 t a = 25 c i b = ? 10 ma ? 9 ma ? 8 ma ? 7 ma ?6 ma ? 5 ma ? 4 ma ? 3 ma ? 2 ma ? 1 ma 0 ? 10 ? 8 ? 6 ? 4 ? 2 base current i b ( ma ) collector current i c ( ma ) 0 ? 800 ? 700 ? 600 ? 500 ? 400 ? 300 ? 200 ? 100 v ce = ? 10 v t a = 25 c ? 0.01 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) i c / i b = 10 t a = ? 25 c 75 c 25 c ? 0.01 ? 0.1 ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 600 500 400 300 200 100 forward current transfer ratio h fe v ce = ? 10 v t a = 75 c 25 c ? 25 c ? 0.01 ? 0.1 ? 1 ? 10 collector current i c ( a ) 1 10 100 transition frequency f t ( mhz ) 0 240 200 160 120 80 40 emitter current i e ( ma ) v cb = ? 10 v t a = 25 c 0 ? 1 24 20 16 12 8 4 ? 10 ? 100 collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) i e = 0 f = 1 mhz t a = 25 c 1 10 100 1 000 base-emitter resistance r be ( k ? ) 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 collector-emitter voltage (resistor between b and e) v cer (v) i c = ? 2 ma t a = 25 c 2SB1219A 2sb1219
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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